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PD - 96233A
INSULATED GATE BIPOLAR TRANSISTOR Features
* * * * * * * * Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free
C
IRG7PH42UPbF IRG7PH42U-EP
VCES = 1200V IC = 60A, TC = 100C
G E
TJ(max) =175C
n-channel
VCE(on) typ. = 1.7V
Benefits
* High efficiency in a wide range of applications * Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses * Rugged transient performance for increased reliability * Excellent current sharing in parallel operation
C C
GC
E
Applications
* * * * U.P.S Welding Solar inverter Induction heating
TO-247AC IRG7PH42UPbF
E GC TO-247AD IRG7PH42U-EP
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C INOMINAL ICM ILM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Max.
1200 90g 60 30
Units
V
A
c
90 120 30 385 192 -55 to +175 C V W
Thermal Resistance
Parameter
RJC (IGBT) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC Thermal Resistance, Case-to-Sink (flat, greased surface)
f
f
Min.
--- --- ---
Typ.
--- 0.24 40
Max.
0.39 --- ---
Units
C/W
Thermal Resistance, Junction-to-Ambient (typical socket mount)
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02/18/10
IRG7PH42UPbF/IRG7PH42U-EP
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
1200 -- -- -- -- 3.0 -- -- -- -- --
Typ.
-- 1.2 1.7 2.1 2.2 -- -16 32 1 700 --
Max. Units
-- -- 2.0 -- -- 6.0 -- -- 150 -- 100 V V
Conditions
VGE = 0V, IC = 100A
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
V/C VGE = 0V, IC = 1mA (25C-150C) IC = 30A, VGE = 15V, TJ = 25C V IC = 30A, VGE = 15V, TJ IC = 30A, VGE = 15V, TJ VCE = VGE, IC = 1mA
VCE(on) VGE(th)
VGE(th)/TJ
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Gate-to-Emitter Leakage Current
e d = 150C d = 175C d
gfe ICES IGES
mV/C VCE = VGE, IC = 1mA (25C - 175C) S VCE = 50V, IC = 30A, PW = 80s A nA VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 175C VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area
Min.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ.
157 21 69 2105 1182 3287 25 32 229 63 3186 2153 5339 20 31 310 162 3338 124 75
Max. Units
236 32 104 2374 1424 3798 34 41 271 86 -- -- -- -- -- -- -- -- -- -- pF ns J ns J nC IC = 30A
d
Conditions
VGE = 15V VCC = 600V IC = 30A, VCC = 600V, VGE = 15V RG = 10, L = 200H,TJ = 25C
d
Energy losses include tail & diode reverse recovery Diode clamp the same as IRG7PH42UDPbF
IC = 30A, VCC = 600V, VGE=15VAd RG=10, L=200H, TJ = 175C Energy losses include tail & diode reverse recovery Diode clamp the same as IRG7PH42UDPbF
VGE = 0V VCC = 30V f = 1.0Mhz IC = 120A VCC = 960V, Vp =1200V Rg = 10, VGE = +20V to 0V, TJ =175C
FULL SQUARE
Notes:
VCC = 80% (VCES ), VGE = 20V, L = 22H, RG = 10 Pulse width 400s; duty cycle 2%. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. R is measured at TJ of approximately 90C. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
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IRG7PH42UPbF/IRG7PH42U-EP
60 50
Load Current ( A )
40 30
Square wave: 60% of rated voltage
I
For both: Duty cycle : 50% Tj = 150C Tsink = 90C Gate drive as specified Power Dissipation = 95W
20 10 0 0.1
Ideal diodes
1 f , Frequency ( kHz )
10
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
400 350
80
300 250
Ptot (W)
60
IC (A)
200 150 100
40
20
50 0
0 25 50 75 100 T C (C) 125 150 175
0
20
40
60
80 100 120 140 160 180 T C (C)
Fig. 2 - Maximum DC Collector Current vs. Case Temperature
1000
Fig. 3 - Power Dissipation vs. Case Temperature
1000
100
10sec
100
IC (A)
IC (A)
100sec
10
1msec DC
10
1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 100 VCE (V) 1000 10000
1 10 100 VCE (V) 1000 10000
Fig. 4 - Forward SOA TC = 25C, TJ 175C; VGE =15V
Fig. 5 - Reverse Bias SOA TJ = 175C; VGE =20V
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IRG7PH42UPbF/IRG7PH42U-EP
120 100 80 60 40 20 0 0 2 4 6 8 10 VCE (V) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A) ICE (A)
120 100 80 60 40 20 0 0 2 4 6 8 10 VCE (V) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
Fig. 6 - Typ. IGBT Output Characteristics TJ = -40C; tp =20s
120 100 80
Fig. 7 - Typ. IGBT Output Characteristics TJ = 25C; tp = 20s
12 10 8
VCE (V)
ICE (A)
ICE = 15A 6 4 2 0 4 8 12 VGE (V) 16
60 40 20 0 0 2 4
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE = 30A ICE = 60A
6
8
10
VCE (V)
20
Fig. 8 - Typ. IGBT Output Characteristics TJ = 175C; tp = 20s
12 10 8
VCE (V)
12 10 8
Fig. 9 - Typical VCE vs. VGE TJ = -40C
6 4 2 0 4 8 12 VGE (V)
ICE = 30A ICE = 60A
VCE (V)
ICE = 15A
ICE = 15A 6 4 2 0 4 8 12 VGE (V) 16
ICE = 30A ICE = 60A
16
20
20
Fig. 10 - Typical VCE vs. VGE TJ = 25C
Fig. 11 - Typical VCE vs. VGE TJ = 175C
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IRG7PH42UPbF/IRG7PH42U-EP
120
ICE, Collector-to-Emitter Current (A)
7000 6000
TJ = 25C T J = 175C
100 80 60 40 20 0 4 6 8 10 12 VGE, Gate-to-Emitter Voltage (V)
5000
Energy (J)
4000 3000 2000 1000 0 0 10 20
EON EOFF
30 IC (A)
40
50
60
Fig. 12- Typ. Transfer Characteristics VCE = 50V; tp = 20s
1000 tdOFF
Fig. 13 - Typ. Energy Loss vs. IC TJ = 175C; L = 200H; VCE = 600V, RG = 10; VGE = 15V
6000 5500 5000
Swiching Time (ns)
100 tR 10 tdON
Energy (J)
tF
4500 4000 3500 3000 2500 2000 1500
EON EOFF
1 0 10 20 30 IC (A) 40 50 60
1000 0 25 50 Rg () 75 100
Fig. 14 - Typ. Switching Time vs. IC TJ = 175C; L = 200H; VCE = 600V, RG = 10; VGE = 15V
10000
Fig. 15 - Typ. Energy Loss vs. RG TJ = 175C; L = 200H; VCE = 600V, ICE = 30A; VGE = 15V
Swiching Time (ns)
1000
tdOFF
100
tF tR tdON 0 20 40 60 80 100
10
RG ()
Fig. 16 - Typ. Switching Time vs. RG TJ = 175C; L = 200H; VCE = 600V, ICE = 30A; VGE = 15V
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IRG7PH42UPbF/IRG7PH42U-EP
10000 Cies
VGE, Gate-to-Emitter Voltage (V)
16 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 Q G, Total Gate Charge (nC) VCES = 600V VCES = 400V
Capacitance (pF)
1000
100
Coes
Cres 10 0 100 200 300 VCE (V) 400 500 600
Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 18- Typical Gate Charge vs. VGE ICE = 30A; L = 600H
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
0.01
0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
0.1306 0.1752 0.0814 0.0031
i (sec)
0.000313 0.002056 0.008349 0.0431
1
2
3
4
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1
0.0001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC
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IRG7PH42UPbF/IRG7PH42U-EP
L
L
0
DUT 1K
VCC
80 V +
-
DUT Rg
Vclamped
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
R = VCC
ICM
DIODE CLAMP
L
DUT / DRIVER
Rg
DUT
VCC
VCC
Rg
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
C f rce o
100K D1 22K
C sense 0.0075
Gf orce DUT
E sense
E f rce o
Fig.C.T.5 - BVCES Filter Circuit
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IRG7PH42UPbF/IRG7PH42U-EP
900 800 700 600 500 VCE (V) 400 300 200 100 0 -100 -0.5
E off L os s
90 tf 80 70 60 50
VCE (V)
90% ICE 5% V CE 5% ICE
900 800 700
TEST CURRENT
90 tr 80 70 60
90% tes t current
600
400 300 200 100 0 -100 9.3
40 30
5% V CE
30 20 10 0 -10 1.5 2
10% test current
20 10 0
Eon Loss
0
0.5
1
time(s)
9.5
9.7
9.9
10.1
-10 10.3
time (s)
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175C using Fig. CT.4
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ICE (A)
40
ICE (A)
500
50
IRG7PH42UPbF/IRG7PH42U-EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
@Y6HQG@) UCDTADTA6IADSAQ@"A XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA Q6SUAIVH7@S
,5)3(
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
A "$C $%AAAAAAAAAAA$&
96U@A8P9@ @6SA A2A! X@@FA"$ GDI@AC
TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRG7PH42UPbF/IRG7PH42U-EP
Dimensions are shown in millimeters (inches)
TO-247AD Package Outline
TO-247AD Part Marking Information
@Y6HQG@) UCDTADTA6IADSBQ"7 !F9@ XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
A"$C $%AAAAAAAAAAA$&
96U@A8P9@ @6SAA2A! X@@FA"$ GDI@AC
TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/2010
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